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An integrated manifold pressure sensor using bulk silicon micromachining techniques is presented. The sensor incorporates the entire signal amplification, temperature compensation, and circuitry for electronic trimming of the sensor chip. The chip circuitry and the manufacturing and assembly process will be discussed. Trimming of the sensitivity and offset production tolerances as well as the temperature coefficients of sensitivity and offset is performed using an electrical trim method. A binary coded digital compensation information is serially fed into an on-chip control unit. The individual bits are decoded and sent to the gates of a bank of trimming thyristors. Once the correct binary code has been selected so that the sensor characteristic is centered in the specified range, the programming voltage is increased and the data is irreversibely stored similarly to the zener zapping method.

A single-chip integrated barometric pressure sensor using bulk silicon micromachining will be presented in this paper. The sensor chip incorporates the complete signal evaluation and trimming of the temperature coefficients and manufacturing tolerances. Sensor chips are mounted onto 6″ × 4″ thick film substrates for batch processing during assembly and trimming. The separated, individual devices can be used for surface mounting (SMD) on a printed circuit board (PCB). Specifications for the sensor functions, as well as the assembly and packaging concept, will be discussed. Assembly, trimming and packaging are the most expensive production steps in the manufacture of sensors. In order to reduce the costs for sensors, we are introducing a standardization of sensor assembly and trimming with batch processing capability: after dicing, the integrated sensor chip is attached to a 6″ × 4″ thick film ceramic substrate with standard die-attaching glue.

Employing novel surface micromachining techniques, a highly miniaturized, robust device has been fabricated. The accelerometer fulfills all requirements of state-of-the-art airbag systems. The present paper reports on the manufacturing and assembly process as well as the performance of the sensor. The capacitive sensing element consists of a moveable proof mass of polysilicon on a single crystalline silicon substrate. A lateral acceleration displaces the proof mass and a capacitive signal is generated at a comb electrode configuration. An external IC circuit provides the signal evaluation and conditioning in a closed loop mode, resulting in low temperature dependency of sensor characteristics and a wide frequency response. The sensor is fabricated by standard IC processing steps combined with additional surface micromachining techniques. A special deposition process in an epitaxial reactor allows the fabrication of moveable masses of more than 10 µm thickness.