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An architecture for thermal management of avionics and electronics systems based on integrated electronics and thermal design at the PCB board level is introduced. Advantages of this approach include the reduction of the number of external components that are required in relation to existing approaches to advanced liquid-based thermal management techniques along with other gains in efficiency due to the PCB board-level adaptivity that is embedded in this design solution. In addition, this type of system can potentially be implemented as a sealed self-contained solution that will allow maintenance personnel to avoid dealing to hazardous cooling compounds as part of the system maintenance procedures.

In this paper, we discuss the metal-oxide-silicon field-effect transistor (MOSFET) also known as the insulated-gate field-effect transistor (IGFET); its applications; the heat it generates because of its material properties. The paper discusses MOSFET’s dimensions, densities, and why the heat it generates is continually increasing. Finally, there is discussion about various present-day thermal management solutions used for resolving MOSFET thermal issues and a recommendation for future approaches.

State-of-the-art and (notional) future receiver architectures have increasingly challenging power consumption and power density requirements under the constraints of limited air vehicle resources. In addition, there is a trend to increase functionality requirements by implementing ongoing technology enhancements and realizing more advanced system and processor architectures. These ongoing developments, in turn, require the development of advanced thermal management and analysis techniques in order to address the resulting systems implementation and integration issues. The analysis presented in this paper is motivated by these continual advances in solid state technology that push for evolving specifications in system size reduction, increasing processor speed, and the increased desire to design “smart” or “intelligent” sensors and subsystems that have superior versatility.

The bipolar junction transistor (BJT) generates heat that can lead to thermal runaway. BJT temperature increases can affect how well this device performs. Moreover, integrated circuits (IC) consisting of large numbers of BJTs can have an adverse effect on how the device performs in aggregate. This paper discusses the BJT functionality and causes of heat generation and proposes potential solutions to this thermal problem.