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Standard

Diminishing Manufacturing Sources and Material Shortages (DMSMS) Management Practices

2015-07-01
CURRENT
GEB1
This document includes a standard set of management practices that can be used, or espoused, by the OEMs for use during the design and development of electronic systems to mitigate the effects of future Diminishing Manufacturing Sources and Material Shortages (DMSMS). While this document focuses primarily on microelectronic devices, the methods described here may also apply to other commodities.
Standard

Reducing the Risk of Tin Whisker-Induced Failures in Electronic Equipment

2014-10-01
CURRENT
GEIAGEB0002
This Bulletin provides a brief description of tin whisker formation and describes various methods recommended by government and industry to reduce the risk of tin whisker-induced failures in electronic hardware. It is not a mandate nor does it contain any requirements. A tin whisker is a single crystal that emerges from tin-finished surfaces. Tin whiskers can pose a serious reliability risk to electronic assemblies that have pure tin finish. The general risks fall into several categories: [1, 2, 3, 8, 16] Short Circuits: The whisker can create a short circuit, either by 1) growing from an area at one potential to an area at another or 2) breaking free and later bridging these areas. In some cases, these shorts may be permanent and cause catastrophic system failures. A transient short may result if the available current exceeds the fusing current of the whisker, and the whisker can fuse open.
Standard

Requirements for Plastic Encapsulated Discrete Semiconductors in Space Applications

2019-08-07
CURRENT
AS6294/3
This document establishes the requirements for screening, qualification, and lot acceptance testing of Plastic Encapsulated Discrete Semiconductors (PEDS) for use in space application environments. The scope of this document is intended for standard silicon based technology only, but the process and methodology described within can be adopted for other technologies such as Silicon Carbide, Gallium Nitride, and Gallium Arsenide. However, when non-silicon based technology parts are being used, the device characterization shall be modified, and it is recommended to use available industry standards based upon published research/testing reports for those technology to address applicable physics of failure.
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