A High-Breakdown Voltage NU+-Gaas/Gd(PU+)-Gainp/N-Gaas Heterojunction Camel-Gate Transistor for Power System Applications

Document Number: 1999-01-2494

Date Published: August 1999

Author(s):
W. C. Liu - National Cheng-Kung Univ.
W. L. Chang - National Cheng-Kung Univ.
J. Y. Chen - National Cheng-Kung Univ.
H. J. Pan - National Cheng-Kung Univ.
W. C. Wang - National Cheng-Kung Univ.
K. H. Yu - National Cheng-Kung Univ.
S. C. Feng - National Cheng-Kung Univ.

Abstract:
A high-breakdown-voltage n\u+-GaAs/\gd(p\u+)-GaInP/n-GaAs camel-gate field-effect transistor with the triple-step doped- channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 \gmA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut- off frequency f\dT of 17 GHz and the maximum oscillation frequency f\dm\da\dx of 33 GHz for a 1x100 um\u2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

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Product Status: In Stock

See other papers presented at 34th Intersociety Energy Conversion Engineering Conference, August 1999, Vancouver, BC, CANAD, Session: Aerospace Power Electronics

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