A Triangular-Barrier Optoelectronic Switch With Light- Controllable Performances
Document Number: 1999-01-2495
Date Published: August 1999
Author(s):
Der-Feng Guo - Chinese Air Force Academy Lib
Abstract:
A GaAs-InGaP triangular-barrier optoelectronic switch, grown by metalorganic chemical vapor deposition (MOCVD), was fabricated. Owing to the avalanche multiplication and carrier confinement in the device operation, S-shaped negative-differential-resistance (NDR) performances were observed in the current-voltage (I-V) characteristics under normal and reverse operation modes. The device showed a flexible optical function related to the potential barrier height controllable by incident light. The dependence of the carrier transport mechanism on illumination was investigated.
File Size: 161K
Product Status: In Stock
See other papers presented at 34th Intersociety Energy Conversion Engineering Conference, August 1999, Vancouver, BC, CANAD, Session: Aerospace Power Electronics
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