4H-SiC VJFET Based Normally-Off Cascode Switches for 300°C Electronic Applications

Document Number: 2008-01-2883

Date Published: November 2008

Author(s):
Victor Veliadis - Northrop Grumman Electronic Systems

Abstract:
Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature SiC devices for high power/temperature switching. High-voltage VJFETs are typically designed normally-on to ensure voltage control operation at high current-gain. However, to exploit the high voltage/temperature capabilities of VJFETs in a normally-off, high-current, voltage-controlled switch, high-voltage, normally-on and low-voltage, normally-off VJFETs were connected in the cascode configuration. In this paper, we review the high-temperature DC characteristics of VJFETs and 1200 V normally-off cascode switches. The measured parameter shifts in the 25\mDC to 300\mDC temperature range are in excellent agreement with theory, confirming fabrication of robust SiC VJFETs and cascode switches.

File Size: 736K
Product Status: In Stock

Included in: V117-2008

See other papers presented at Power Systems Conference, November 2008, Seattle, WA, USA, Session: High-Temperature Electronics - Active Devices (Part 2 of 2)

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