250ºC SiC Power Module Package Design

Document Number: 2008-01-2892

Date Published: November 2008

Author(s):
Puqi Ning - Virginia Tech
Rixin Lai - Virginia Tech
Fei Wang - Virginia Tech
Khai Ngo - Virginia Tech
Daniel Huff - Virginia Tech

Abstract:
In order to take full advantage of SiC, a high-temperature package for power module using SiC devices was designed, developed, fabricated and tested. The details of the material selection and fabrication process are described. High-temperature reliability test and power test shows that the package presented in this paper can perform well at the high junction temperature.

File Size: 369K
Product Status: In Stock

See other papers presented at Power Systems Conference, November 2008, Seattle, WA, USA, Session: High-Temperature Electronics - Power Converters / Inverters & Control

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