Development of Fabrication Technology for Mos-Based Power Switching Devices in Sic

Document Number: 971236

Date Published: June 1997

Author(s):
Dr James A Cooper, Jr. - Purdue Univ

Abstract:
Power switching devices in the wide bandgap semiconductor silicon carbide (SiC) are under development in many laboratories in the United States, Europe, and Japan. Because SiC can be thermally oxidized to form SiO\d2, it is possible to construct MOS-based power devices such as power MOSFETs, IGBTs, and MCTs in this material. This paper outlines the technical challenges which must be overcome before MOS-based power switching devices in SiC can reach the commercial marketplace.

File Size: 496K
Product Status: In Stock

See other papers presented at SAE Aerospace Power Systems Conference, April 1997, Williamsburg, VA, USA, Session: Power Electronic Devices

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