Approaches to Obtain Tunable Diode Lasers for Air Monitoring Between 2 and 2.5 Gmm on Inp

Document Number: 981566

Date Published: July 1998

Author(s):
Martin A. Young - Jet Propulsion Laboratory
Siamak Forouchar - Jet Propulsion Laboratory
Sam A. Keo - Jet Propulsion Laboratory
James Singletery - Jet Propulsion Laboratory

Abstract:
Alternative approaches for developing 2.0-2.5 \gmm single-frequency semiconductor lasers are reviewed. Room-temperature lasers in this wavelength range are important for the development of absorption spectroscopy instruments used in environmental monitoring and life support for space applications. In spite of significant efforts towards the growth and fabrication of lasers using the GaSb-based material system, room-temperature, single-frequency lasers in the 2-2.5 \gmm wavelength range are not yet available. As an alternative to the GaSb-based material system, novel techniques using the mature InP-based material system (which is potentially more suitable for single-frequency laser fabrication) are being investigated. These include: highly strained InGaAs quantum well layers, graded buffer layers, laterally confined growth, and InGaAsN quantum well layers. In this paper, we will review the current status and limitation of these techniques to develop ambient-temperature, single-frequency lasers.

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Product Status: In Stock

See other papers presented at International Conference On Environmental Systems, July 1998, Danvers, MA, USA, Session: Advanced Life Support Sensor and Control Technology

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