Opto Diode’s SXUV Ø2.5 mm photodiode features a circular active area and provides stability after extreme ultraviolet (EUV) conditions. It is housed in a TO-39, 3-pin, windowless package that delivers responsivity down to 1 nm. The active area is typically Ø2.5 mm, and the minimum shunt resistance is 20 MOhms @ ±10 mV (typical). The photodiode is suited for high-power laser monitoring at wavelengths of 1 to 200 nm, or other tasks that require a highly stable photodiode after EUV exposure. Device parameters include reverse breakdown voltage of 20 V with the capacitance of 1 nF, and response time of 1 ns (typical) to 2 ns maximum.