Browse Publications Technical Papers 1999-01-2494
1999-08-02

A High-Breakdown Voltage n + -GaAs/δ (p + )-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications 1999-01-2494

A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency fmax of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

SAE MOBILUS

Subscribers can view annotate, and download all of SAE's content. Learn More »

Access SAE MOBILUS »

Members save up to 43% off list price.
Login to see discount.
Special Offer: Purchase more aerospace standards and aerospace material specifications and save! AeroPaks off a customized subscription plan that lets you pay for just the documents that you need, when you need them.
X