Browse Publications Technical Papers 1999-01-2495
1999-08-02

A Triangular-Barrier Optoelectronic Switch with Light-Controllable Performances 1999-01-2495

A GaAs-InGaP triangular-barrier optoelectronic switch, grown by metalorganic chemical vapor deposition (MOCVD), was fabricated. Owing to the avalanche multiplication and carrier confinement in the device operation, S-shaped negative-differential-resistance (NDR) performances were observed in the current-voltage (I-V) characteristics under normal and reverse operation modes. The device showed a flexible optical function related to the potential barrier height controllable by incident light. The dependence of the carrier transport mechanism on illumination was investigated.

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