Browse Publications Technical Papers 2003-01-0203
2003-03-03

SOI Smart Power IC Technology for Automotive ECUs and Smart Actuators 2003-01-0203

We started to fabricate 4um design rule SOI (Silicon On Insulator) smart power ICs since 1996 for automotive applications. Now we developed 0.8um design rule SOI smart power ICs. These ICs are using trench dielectric isolation technology, employing an SOI wafer and deep trench etching. This technology could be used to integrate 0.8um CMOS transistors as digital devices, DMOS (Double diffused MOS) transistors as power devices, high breakdown voltage bipolar transistors as analog devices, and to create thin film resistors for high precision resistance, which could be trimmed using a laser. SOI smart power ICs suits various ECUs (Electronic Control Units) and smart actuators for automotive applications, due to its non-parasitic elements and high temperature operation. We describe the requirements of devices for automotive applications and the features of SOI Smart Power ICs.

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