Browse Publications Technical Papers 2004-01-1684
2004-03-08

Zth Thermal Modelling of MOSFET in Sub-Milliseconds Range 2004-01-1684

1AbstractAn FEA (Finite Element Analysis) model was developed based on the physical dimension of the MOSFET device to produce a Zth curve closely matching the experimental Zth curve. This Finite Element Analysis model would then be extrapolated down to the region beyond the capability of the hardware of the Zth measurement system

SAE MOBILUS

Subscribers can view annotate, and download all of SAE's content. Learn More »

Access SAE MOBILUS »

Members save up to 43% off list price.
Login to see discount.
Special Offer: Purchase more aerospace standards and aerospace material specifications and save! AeroPaks off a customized subscription plan that lets you pay for just the documents that you need, when you need them.
X