Browse Publications Technical Papers 2011-01-2625
2011-10-18

Silicon Carbide Power Electronics for High-Temperature Power Conversion and Solid-State Circuit Protection in Aircraft Applications 2011-01-2625

The SiC Junction Field Effect Transistor (JFET) technology has continued to mature, allowing for a wider range of product offerings that are expected to play an important role in the future aerospace and hybrid vehicle system designs. This paper will give an overview of vertical trench SiC JFET technology detailing the high-temperature dc characteristics of the discrete devices also show power module switching behavior up to 100A. Additional characterization of the all-SiC power modules used as solid-state circuit breakers will be given.

SAE MOBILUS

Subscribers can view annotate, and download all of SAE's content. Learn More »

Access SAE MOBILUS »

Members save up to 43% off list price.
Login to see discount.
Special Offer: With TechSelect, you decide what SAE Technical Papers you need, when you need them, and how much you want to pay.
X