Browse Publications Technical Papers 2012-36-0211

Using OCTO SOI nMOSFET to Handle High Current for Automotive Modules 2012-36-0211

This paper presents an experimental comparative study between the OCTOGONAL-Gate Silicon-on-Insulator (SOI) nMOSFET (OSM) and the conventional SOI nMOSFET (CSM) considering the same bias conditions and the same gate area (AG), in order to verify the influence of this new MOSFET layout style to handle high current for automotive modules. Analog integrated circuits (ICs) design tends to be considered an art due to a large number of variables and objectives to achieve the product specifications. The designer has to find the right tradeoffs to achieve the desired automotive specification such as low power, low voltage, high speed and high current driver. SOI MOSFET's technology is required to provide the growth of embedded electronics. This growth is driving demand for power-handling devices that are smaller yet still provide high current driver capabilities. To optimize the transistor's operation, attending the aggressive downscaling and automotive requirements, emerges the OCTO SOI nMOSFET as an alternative to answer the current driver and sizing question. In addition, this innovative layout style can provide low-power and more robustness against Electromagnetic Interference (EMI), Electro Static Discharge (ESD), according to Electromagnetic Compatibility (EMC).


Subscribers can view annotate, and download all of SAE's content. Learn More »


Members save up to 16% off list price.
Login to see discount.
Special Offer: Download multiple Technical Papers each year? TechSelect is a cost-effective subscription option to select and download 12-100 full-text Technical Papers per year. Find more information here.