SiC devices have inherent fast switching capabilities due to their superior material properties, and are considered potential candidates to replace Si devices for traction inverters in electrified vehicles in future. However, due to the comparatively low gate threshold voltage, SiC devices may encounter oscillatory false triggering especially during fast switching. This paper analyzed the causes of false triggering, and also studied the impact of a critical parasitic parameter - common source inductance. It is shown that crosstalk is the main cause for the false triggering in the case and some positive common source inductance help to mitigate the crosstalk issue. A packaging layout method is proposed to create the positive common source inductance through layout of control terminals / busbars, and/or the use of control terminal bonded wires at different height.