Optimization of RF magnetron sputtering parameters for deposition of Zinc Oxide semiconductor film at 100ᵒC 2019-28-0150
Zinc oxide semiconductor thin films are deposited on glass substrate at different RF magnetron sputtering parameters. The deposited films were characterized as a function of deposition rate, gas flow ratio, working pressure and RF power. Field emission scanning electron microscopy, X-ray diffraction and hall measurement were utilized to analyze the effect of the deposition condition on the surface morphology, structure and electrical properties of ZnO thin films. The deposition conditions were optimized to give good quality films suitable for the application of flexible flat panel display. All the films were deposited at low temperature of 100ᵒC.