Analytical Investigation of Junction Temperatures for a Pulsed GaAs Laser 831126

This paper summarizes a recent analytical study of a pulsed Gallium Arsenide diode laser. The study was conducted to investigate the maximum junction temperature for a pulsed diode and to explore the possibility of junction temperature reduction by varying the diode pulse duration and changing the diode mounting configuration. Due to large local heat generation, the junction's temperature quickly rises during the pulse, and large temperature gradients are created in several directions. For a given diode column and optical power level, the effects of diode length and pulse duration on junction temperatures were examined. Also, mounting configurations were investigated to the extent of varying top and bottom mounting plate thicknesses. Variation of the diode length and pulse duration provided the most potential for the reduction of junction temperatures, while minimum copper mounting plate thicknesses are required for the prevention of sharp increases in junction temperatures.


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