1984-10-01

Gallium Arsenide Solar Cell Vapor Phase (MOCVD) Technology 841442

This paper describes progress made in adapting a chemical vapor deposition (CVD) method, using mostly organo-metallic (OM) sources, to deposit layers of gallium arsenide to form an efficient solar cell. The requirements of the layer deposition are discussed, as are the necessary cell process steps required to form a qualified space-use solar cell. The results obtained to date are summarized, along with some consideration.

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