Improved Electrical Properties of n-Type SiGe Alloys 929419
The effect of changes in the carrier concentration and mobility for heavily doped n-type SiGe on the electrical power factor has been investigated. It has been shown that power factors of 37-40 μV/cm-K2 can be achieved with carrier concentrations of 2.0 - 2.5 × 1020 cm-3 and mobilities of 38-40 cm2/V-sec. Many samples with suitable carrier concentration do not have high mobilities and some rationale for this behavior is presented.
Initial results are presented on fabrication of n-type samples from ultra-fine powders. The emphasis in this work is to achieve thermal conductivity reductions by adding inert particles to scatter mid-frequency phonons.