High voltage Schottky diodes have been fabricated on 3C-SiC films grown on Si substrates. A Ni metallization process has been developed to fabricate both rectifying and ohmic contacts to SiC by controlling the post-annealing temperature. A high voltage (>150V) breakdown has been obtained at room temperature from the SiC Schottky diode. The Ni-SiC Schottky junction shows a thermal resistance for temperatures as high as 600°C. This technology has good potential for monolithic integration of SiC high power devices and Si integrated circuits.