Silicon Carbide Inverter for EV/HEV Application featuring a Low Thermal Resistance Module and a Noise Reduction Structure
This paper presents the technologies incorporated in an electric vehicle (EV)/hybrid electric vehicle (HEV) inverter built with power semiconductors of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) instead of conventional silicon (Si) insulated gate bipolar transistors (IGBTs). A SiC inverter prototype of 2.9 L in size for driving an 80-kW motor was fabricated and evaluated on a motor test bench. The SiC inverter prototype attained average efficiency of 98.5% in the Worldwide harmonized Light-duty Test Cycle (WLTC) driving mode. The two main technologies achieved with this SiC inverter prototype are described. The first one is a new direct-cooled power module with a thick copper (Cu) heat spreader located under the semiconductors that improves thermal resistance by 34% compared with a conventional direct-cooled power module.