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One way to improve the fuel efficiency of HVs is to reduce the losses and size of the Power Control Unit (PCU). To achieve this, it is important to reduce the losses of power devices (such as IGBTs and FWDs) used in the PCU since their losses account for about 20% of the total loss of an HV. Furthermore, another issue when reducing the size of power devices is ensuring the thermal feasibility of the downsized devices. To achieve the objectives of the 4th generation PCU, the following development targets were set for the IGBTs: reduce power losses by 19.8% and size by 30% compared to the 3rd generation. Power losses were reduced by the development of a new Super Body Layer (SBL) structure, which improved the trade-off relationship between switching and steady-state loss. This trade-off relationship was improved by optimizing the key SBL concentration parameter.

The GS450h requires higher system voltage to increase the motor output. For the insulated gate bipolar transistor (IGBT) that serves as the built-in switching device in the intelligent power module (IPM), higher voltage means greater loss and a larger device surface area, and it can also reduce the vehicle's fuel economy performance and increase its cost. To solve these issues, IGBT losses were reduced by (1) using a trench structure to make the IGBT more compact and (2) using a new structure in which the concentration of impurities in the drift layer is optimized. As a result, the device surface area was reduced by 10%, losses were reduced by 14%, and improved vehicle performance was achieved.