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SiC devices have inherent fast switching capabilities due to their superior material properties, and are considered potential candidates to replace Si devices for traction inverters in electrified vehicles in future. However, due to the comparatively low gate threshold voltage, SiC devices may encounter oscillatory false triggering especially during fast switching. This paper analyzed the causes of false triggering, and also studied the impact of a critical parasitic parameter - common source inductance. It is shown that crosstalk is the main cause for the false triggering in the case and some positive common source inductance help to mitigate the crosstalk issue. A packaging layout method is proposed to create the positive common source inductance through layout of control terminals / busbars, and/or the use of control terminal bonded wires at different height.

Due to global trends and government regulations for CO2 emission reduction, the automotive industry is actively working toward vehicle electrification to improve fuel efficiency and minimize tail-pipe pollutions. Silicon IGBTs and power diodes used in today’s HEV inverter systems are mature and reliable components, but have their limitation on energy losses. SiC, on the other hand, has potential to offer additional boost of efficiency for the HEV drive system. In recent years, commercial SiC MOSFETs have improved significantly in performance. However, reliability concerns and high prices still limit their overall competitiveness against silicon. Ford Motor Company has partnered with semiconductor manufacturers to evaluate SiC products for automotive applications. In this study, 900V SiC MOSFET modules from Wolfspeed are tested and compared with an 800V silicon IGBT module of similar power handling capability.