Fabrication of laterally coupled InGaAsSb-GaSb-AlGaAsSb DFB laser structures
The development of tunable diode laser systems in the 2 - 5 μm spectral region will have numerous applications for trace gas detection. To date, the development of such systems has been hampered by the difficulties of epitaxial growth, and device processing in the case of the Sb-based materials system. One of the compounding factors in this materials system is the use of aluminum containing compounds in the laser diode cladding layers. This makes the regrowth steps used in traditional lasers very difficult. As an alternative approach we are developing laterally coupled antimonide based lasers structures that do not require the regrowth steps. In this paper, the materials growth, device processing and development of the necessary drive electronics for an antimony based tunable diode laser system are discussed.