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Technical Paper

A New High Efficiency Segmented Thermoelectric Unicouple

1999-08-02
1999-01-2567
To achieve high thermal-to-electric energy conversion efficiency, it is desirable to operate thermoelectric generator devices over large temperature gradients and also to maximize the thermoelectric performance of the materials used to build the devices. However, no single thermoelectric material is suitable for use over a very wide range of temperatures (~300-1000K). It is therefore necessary to use different materials in each temperature range where they possess optimum performance. This can be achieved in two ways: 1) multistage thermoelectric generators where each stage operates over a fixed temperature difference and is electrically insulated but thermally in contact with the other stages 2) segmented generators where the p- and n-legs are formed of different segments joined in series. The concept of integrating new thermoelectric materials developed at the Jet Propulsion Laboratory into a segmented thermoelectric unicouple has been introduced in earlier publications.
Technical Paper

Search for New High Temperature Thermoelectric Materials

1992-08-03
929424
Although important efforts are actually devoted to improve Si-Ge materials, their thermoelectric energy conversion efficiency remains relatively low and the adimensional ZT value does not exceed 1. Higher values can be obtained by investigating new materials. A search for new high temperature thermoelectric materials identified a certain number of compounds between transition metals and bismuth, antimony and germanium as potential candidates. Results of the preliminary synthesis of samples by a variety of techniques (Bridgman, mechanical alloying…) are presented as well as some electrical measurements. Some compounds showed interesting properties and need to be investigated in more details.
Technical Paper

Improved Electrical Properties of n-Type SiGe Alloys

1992-08-03
929419
The effect of changes in the carrier concentration and mobility for heavily doped n-type SiGe on the electrical power factor has been investigated. It has been shown that power factors of 37-40 μV/cm-K2 can be achieved with carrier concentrations of 2.0 - 2.5 × 1020 cm-3 and mobilities of 38-40 cm2/V-sec. Many samples with suitable carrier concentration do not have high mobilities and some rationale for this behavior is presented. Initial results are presented on fabrication of n-type samples from ultra-fine powders. The emphasis in this work is to achieve thermal conductivity reductions by adding inert particles to scatter mid-frequency phonons.
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