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Vehicle electrical/electronic systems may be affected when immersed in an electromagnetic field generated by sources such as radio and TV broadcast stations, radar and communication sites, mobile transmitters, cellular phones, etc. The reverberation method is used to evaluate the immunity of electronic devices in the frequency range of 500 MHz to 2.0 GHz, with possible extensions to 200 MHz and 10 GHz, depending upon chamber size and construction. Optional pulse modulation testing at HIRF (High Intensity Radiated Fields) test levels, based upon currently known environmental threats, has been added to this revision of the standard. This document addresses the Mode Stir (Continuous Stirring) Reverberation testing method which has been successfully utilized as a design and production stage development tool for many years. The Mode Tuned (Stepped Tuner) Reverberation testing method is covered in the SAE J1113-28 document.

This SAE Recommended Practice defines a method for evaluating the near field electric or magnetic component of the electromagnetic field at the surface of an integrated circuit (IC). This technique is capable of providing a detailed pattern of the RF sources internal to the IC. The resolution of the pattern is determined by the characteristics of the probes used and the precision of the mechanical probe positioner. The method is usable over the 10 MHz to 3 GHz frequency range with existing probe technology. The probe is mechanically scanned according to a programmed pattern in a plane parallel or perpendicular to the IC surface and the data is computer processed to provide a color-enhanced representation of field strength at the scan frequency. This procedure is applicable to measurements from an IC mounted on any circuit board that is accessible to the scan probe. For comparisons, the standardized test board shall be used.

This SAE Recommended Practice defines a method for evaluating the near field electric or magnetic component of the electromagnetic field at the surface of an integrated circuit (IC). This technique is capable of providing a detailed pattern of the RF sources internal to the IC. The resolution of the pattern is determined by the characteristics of the probes used and the precision of the mechanical probe positioner. The method is usable over the 10 MHz to 3 GHz frequency range with existing probe technology. The probe is mechanically scanned according to a programmed pattern in a plane parallel or perpendicular to the IC surface and the data is computer processed to provide a color-enhanced representation of field strength at the scan frequency. This procedure is applicable to measurements from an IC mounted on any circuit board that is accessible to the scan probe. For comparisons, the standardized test board shall be used.

This document establishes a method for characterizing the design margins and compatibility of electronic devices and equipment used in vehicles to various voltage fluctuations and transients over temperature.

This document establishes methods for characterizing the robustness of vehicle electronic modules to certain environmental stresses. They include: Voltage-Temperature Design Margins Voltage Interruptions-Transients Over Temperature Voltage Dips Current Draw Under a Number of Conditions These methods can be applied during Development, Pre-Qualification, Qualification or for Conformity. This document does not address other environmental robustness stresses such as vibration, high temp exposure, load faults, ESD, etc.

The methods included in this document are: a Voltage-Temperature Design Margins. b Voltage Interruptions and Transients. c Voltage Dropouts and Dips. d Current Draw Under a Number of Conditions. e Switch Input Noise These methods are best applied during the Development stage but can be used at all stages (e.g. Pre-Qualification, Qualification or Conformity).

The methods included in this document are: a Voltage-Temperature Design Margins. b Voltage Interruptions and Transients. c Voltage Dropouts and Dips. d Current Draw Under a Number of Conditions. e Switch Input Noise These methods are best applied during the Development stage but can be used at all stages (e.g., Pre-Qualification, Qualification or Conformity).

This SAE Standard establishes a common basis for the evaluation of devices and equipment in vehicles against transient transmission by coupling via lines other than the power supply lines. The test demonstrates the immunity of the instrument, device, or equipment to coupled fast transient disturbances, such as those caused by switching of inductive loads, relay contact bouncing, etc. Four test methods are presented – Capacitive Coupling Clamp, Chattering Relay, Direct Capacitor Coupling, and Inductive Coupling Clamp.

This SAE Standard establishes test methods for the evaluation of devices and equipment in vehicles against transient transmission by coupling via lines other than the power supply lines. The test methods demonstrates the immunity of the instrument, device, or equipment to coupled fast transient disturbances, such as those caused by switching of inductive loads, relay contact bouncing, etc. Four test methods are presented in SAE J1113-12: the capacitive coupling clamp (CCC) method the direct capacitive coupling (DCC) method the inductive coupling clamp (ICC) method the capacitive/inductive coupling (CIC) method

This measurement procedure defines a method for measuring the electromagnetic radiation from an integrated circuit (IC). The IC being evaluated is mounted on an IC test printed circuit board (PCB) that is clamped to a mating port (referred to as a wall port) cut in the top or bottom of a TEM or wideband TEM (GTEM) cell. The test board is not in the cell as in the conventional usage but becomes a part of the cell wall. This method is applicable to any TEM or GTEM cell modified to incorporate the wall port; however, the measured RF voltage is affected by the septum to test board (wall) spacing. This procedure was developed using a 1 GHz TEM cell with a septum to wall spacing of 45 mm and a GTEM cell with average septum to wall spacing of 45 mm over the port area. Other cells may not produce identical spectral output but may be used for comparative measurements, subject to their frequency and sensitivity limitations.

This measurement procedure defines a method for measuring the electromagnetic radiation from an integrated circuit (IC). The IC being evaluated is mounted on an IC test printed circuit board (PCB) that is clamped to a mating port (referred to as a wall port) cut in the top or bottom of a TEM or wideband TEM (GTEM) cell. The test board is not in the cell as in the conventional usage but becomes a part of the cell wall. This method is applicable to any TEM or GTEM cell modified to incorporate the wall port; however, the measured RF voltage is affected by the septum to test board (wall) spacing. This procedure was developed using a 1 GHz TEM cell with a septum to wall spacing of 45 mm and a GTEM cell with average septum to wall spacing of 45 mm over the port area. Other cells may not produce identical spectral output but may be used for comparative measurements, subject to their frequency and sensitivity limitations.

This SAE Recommended Practice provides supporting information for the emission and immunity measurement procedures defined in the SAE J1752 series of documents.

This SAE Recommended Practice provides supporting information for the emission and immunity measurement procedures defined in the SAE J1752 series of documents.