Development of a High Temperature Power Module Technology with SiC Devices for High Density Power Electronics
This paper presents the development of a high density packaging technology for wide band gap power devices, such as silicon carbide (SiC). These devices are interesting candidates for the next aircraft power electronic converters. Effectively they achieve high switching frequencies thanks to the low losses level. High switching frequencies lead to reduce the passive components size and to an overall weight reduction of power converters. Moreover, SiC devices may enable operation at junction temperatures around 250°C. The cooling requirement is much less stringent than for usual Si devices. This might considerably simplify the cooling system, and reduce the overall weight. To achieve the integration requirements for SiC devices, classical wire bonding interconnection is replaced by a stacked packaging using bump interconnection technologies, called sandwich. These technologies offer two thermal paths to drain heat out and present more power integration possibilities.