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An SOI type pressure sensor has been developed which can measure pressure at high temperature environments above 150°C. SOI stands for Silicon On Insulator. A single-crystalline silicon layer is located on an insulating layer formed on a silicon substrate. The piezoresistors of the SOI type pressure sensor are made from the single-crystalline silicon layer which is isolated from the silicon substrate by the insulating layer. There is no leakage current from the piezoresistors. The SOI structure is made by the laser-recrystallization-method. The properties of the SOI type pressure senor are as good as conventional semiconductor pressure sensors.