A New Method of Reliability Testing for C-MOS VLSI's Evaluation
This paper presents a new method of reliability testing for C-MOS VLSI's evaluation, i.e. a means to verify the future reliability prediction. In this method, VLSI's under testing are stressed by soft x-ray irradiation and subsequently annealed at moderate temperature and then they are classified according to the time required to recover the computer action of VLSI's to the previous level. This method offers a new technology for future reliability testing in higher accuracy of C-MOS VLSI's used in automotive electronics system compared to the conventional technique so called burn-in.