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The electrification of the powertrain is still one of the main challenges and innovation drivers for modern cars. With the introduction of the Toyota Prius, launched in Japan in 1997 the first commercially available hybrid car in mass production, the development continued towards the BMW i3 launched in July 2013. One main component for all kind of hybrid cars is still the power semiconductor, which is used for DC/DC converters and for the inverter to drive the electric motor for the traction control. What makes the selection of the right power semiconductor complex, is the variety of different voltage levels within the car (from standard 12V board net, the new 48V board net all the way up to 400V and above) plus different requirements in terms of switching and conduction performance, or accordingly power losses. The selection of device by application and voltage will be discussed in this paper.

The amount of electronics in vehicles is increasing, so is the amount of power electronics circuits, like inverters for electric motor drives or dc/dc converters. The muscles of these circuits are power transistors like MOSFETs and IGBTs - in each circuit are several of them. While MOSFETs and IGBTs have advanced over the years in terms of their performance, their wide product spectrum and feature spectrum as well as cost, they are still not unbreakable, but semiconductors which are more sensitive to electrical or thermal overstress than, a relay for instance. Especially electrical overstress, like overvoltage or over current, may damage a power transistor within a short time frame. Hence, electrical overstress must be avoided when designing the power electronics circuit. However, even a power transistor in a carefully designed power electronics circuit, may still be exposed to over current, short circuit, over voltage, over temperature and so forth.

This paper will describe different types of short circuit conditions, how they affect power semiconductor devices, and how to detect and safely mitigate the event.