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The thick oxide layer of silicon-on-insulator (SOI) devices significantly reduces the junction leakage current at elevated temperatures compared to similar Si devices, resulting in an elevated maximum operating temperature. The maximum operating temperature, specified by manufacturers, of commercial SOI devices/circuits with conventional packaging is usually 225°C. It is important to understand the performance and de-ratings of these SOI circuits at temperatures above 225°C without the temperature limit imposed by commercial packaging technology. This work tested a low frequency square-wave oscillator based on an SOI 555 Timer with a special high temperature ceramic packaging technology from room temperature to 375°C. The timer die was attached to a 96% aluminum oxide substrate with high temperature durable gold (Au) thick-film metallization, and interconnected with Au wires.