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This paper presents an experimental comparative study between the OCTOGONAL-Gate Silicon-on-Insulator (SOI) nMOSFET (OSM) and the conventional SOI nMOSFET (CSM) considering the same bias conditions and the same gate area (AG), in order to verify the influence of this new MOSFET layout style to handle high current for automotive modules. Analog integrated circuits (ICs) design tends to be considered an art due to a large number of variables and objectives to achieve the product specifications. The designer has to find the right tradeoffs to achieve the desired automotive specification such as low power, low voltage, high speed and high current driver. SOI MOSFET's technology is required to provide the growth of embedded electronics. This growth is driving demand for power-handling devices that are smaller yet still provide high current driver capabilities.

It has the aim to discuss the evolution of electronics components, integrated circuits, new transistors concepts and associate its importance in the automotive modules. Today, the challenge is to have devices which consume less power, suitable for high-energy radiation environment, less parasitic capacitances, high speed, easier device isolation, high gain, easier scale-down of threshold voltage, no latch-up and higher integration density. The improvement of those characteristics mentioned and others in the electronic devices enable the automotive industry to have a more robust product and give the possibility to integrate new features in comfort, safety, infotainment and telematics modules. Finally, the intention is to discuss advanced structures, such as the silicon-on-insulator (SOI) and show how it affects the electronics modules applied for the automotive area.