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Journal Article

Test of SOI 555 Timer with High Temperature Packaging

2008-11-11
2008-01-2882
The thick oxide layer of silicon-on-insulator (SOI) devices significantly reduces the junction leakage current at elevated temperatures compared to similar Si devices, resulting in an elevated maximum operating temperature. The maximum operating temperature, specified by manufacturers, of commercial SOI devices/circuits with conventional packaging is usually 225°C. It is important to understand the performance and de-ratings of these SOI circuits at temperatures above 225°C without the temperature limit imposed by commercial packaging technology. This work tested a low frequency square-wave oscillator based on an SOI 555 Timer with a special high temperature ceramic packaging technology from room temperature to 375°C. The timer die was attached to a 96% aluminum oxide substrate with high temperature durable gold (Au) thick-film metallization, and interconnected with Au wires.
Technical Paper

Low Temperature Performance Evaluation of Battery Management Technologies

1999-08-02
1999-01-2543
This paper presents the results of research efforts performed to evaluate the performance of rechargeable battery management technologies at low temperatures. Three battery chemistries are considered in this work. These are the Nickel-Cadmium (NiCd), Nickel-Metal Hydride (NiMH) and Lithium-ion (Li-ion). Battery management evaluation kits from two battery manufacturers were acquired and tested. These are the DS2434k, DS2435k and DS2437k from Dallas Semiconductor and the MAX712, MAX846A and MAX2003A from MAXIM Integrated Products. The kits were characterized in a chamber whose temperature was changed and regulated using liquid nitrogen. The temperature of the chamber was varied from 20°C to −180°C. At each temperature, the battery voltage, current, state of charge, temperature and other auxiliary variables as monitored by each chip were recorded. Also, the performance of each kit after a complete cooling and heating cycle is recorded.
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