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Thin barium titanate(BT), lead zirconate titanate(PZT), barium strontium titanate(BST) films are being developed for use in microelectronics, electromechanical and optoelectronic applications. Thin BaTiO3, Pb(ZrTi)O3 and (BaSr)TiO3 film capacitor devices were fabricated using RF sputtering techniques. The typical dielectric constant of these film capacitors was in the range of 300 to 1140. These film capacitors had dissipation factors between 0.2% to 0.6 % before annealing and 4-6% after annealing. The film capacitors have breakdown voltages in the range of 1×105 V/cm to 1.2×106 V/cm. The resistivity was in the range of 1010 to 1012 ohm-cm before annealing and 1013 to 1014 ohm-cm after annealing. The capacitance of films produced to-date had little dependence on frequency. Thermal cycling in the temperature range of 50 to 300°C had very limited impact on the capacitance and dissipation factor. Measurements of dielectric and material properties are reported.

Microstructural evolution of a Mo-10W-2Re-0.5HfC alloy was studied in the temperature range of 298 K to 2200 K. The typical characteristics of the microstructure were curly deformation bands, with nucleation at boundaries and subgrain coalescence. The recrystallization temperature of the Mo-10W-2Re-0.5HfC alloy was determined to be near 1950 K, which is comparable with 2125 K for W-4Re-0.35 HfC and 2000 K for W-0.35 HfC. Microhardness tests were performed before and after 1 hour of vacuum annealing and the results indicate that the mechanical strength of Mo-10W-2Re-0.5HfC is lower than that of W-4Re-0.35 HfC or W-0.35 HfC. X-ray diffraction and pole figures indicate that this particular alloy exhibits the primary texture (110) and secondary texture (112) which is normally observed in B.C.C. metals such as Molybdenum. The creep strengths of W-4Re-0.35HfC, TZM-Mo, and W-25Re-30Mo were evaluated and compared at the same stress level.