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This paper demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. The decrease in on-resistance under cryogenic temperature allows the device to operate at a much higher power and current condition. Also, it is demonstrated that the MOSFET device can be effectively kept at cryogenic temperature by spray cooling with liquid nitrogen. Over 80 W of heat generated can be removed continuously with spray cooling.

Effective thermal management and removal of the waste heat generated at diode arrays is critical to the development of high-power solid-state lasers. Thermal design must be considered in the packaging of these arrays. Two different packages with heat dissipation through spray cooling are evaluated experimentally and numerically. Their overall performance is compared with other packaging configurations using different heat removal approaches. A novel packaging design is proposed that can fulfill the requirements of low thermal resistance, temperature uniformity among emitters in the diode array, low coolant flow rate, simplicity and low assembly cost. The effect of temperature uniformity on the pumping efficiency for gain media is examined for our novel packaging design. The thermal stress induced by temperature variation within an emitter is also considered.