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In order to take full advantage of SiC, a high temperature package for power module using SiC devices was designed, developed, fabricated and tested. The details of the material selection and fabrication process are described. High temperature reliability test and power test shows that the package presented in this paper can perform well at the high junction temperature.

Seven encapsulants with operating temperatures up to 250°C were surveyed for use in planar packages for wide-bandgap dice. Two of the encapsulants failed processability test because they were not able to flow, and another two failed because they induced voids or cracks after curing. The dielectric results of the remaining three encapsulants showed that both dielectric strength and permittivity decreased almost 40% when the temperature was increased up to 250°C. As the three encapsulants were used to encapsulate a power module, it was proven that all of them could protect the package from early breakdown caused by the poor dielectric strength of air.