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Technical Paper

High Temperature, High Frequency SiC Three Phase Inverter for Aircraft Applications

2010-11-02
2010-01-1798
This paper presents the results of a silicon-carbide-based 300V 5 kW fully functional three-phase inverter module operating at high temperatures and device junctions up to 200°C. Each phase power module employs eight SemiSouth 100 mΩ/1200V SiC JFETs (SJEP120R100) in parallel per switch position. The paper will highlight both the electrical and the thermo-mechanical design. Experimental results validating the overall design will also be discussed. The core of the electrical design was to take advantage of the low input capacitance, high switching frequency (50 kHz) and high temperature capability of the SiC JFET in order to obtain a high power density inverter. Since SemiSouth's SiC JFET is a relatively new device, computer models are not currently available from the manufacturer, which presents a hurdle during the design stage. In order to produce reliable performance predictions, the team has focused on developing a model for the SiC JFETs ultimately used.
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