Journal Article
High Current (>1000A), High Temperature (>200°C) Silicon Carbide Trench MOSFET (TMOS) Power Modules for High Performance Systems
2012-10-22
2012-01-2209
The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon (Si)-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and ≻100 kHz switching speeds. Here, APEI, Inc., presents the design process and testing data of its newly developed high performance HT-2000 SiC power module for extreme environment systems and applications.
