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This paper presents two newly developed technologies of optimizing impurity diffusion concentration for silicon semiconductor material and controlling internal stress of the top SiN (Silicon Nitride) layer on a membrane of a silicon substrate to apply them to the manufacturing process of MEMS (Micro Electro Mechanical Systems) type air-flow sensor chips. Until today, in MEMS-type airflow sensors, poly-crystalline silicon (poly-Si) and platinum were widely used as a resistor material of key functional elements on a membrane of air-flow-rate measurement portion. The functional resistors on the membrane are required to monitor high temperatures of about 300 °C and to perform the self-heating operations at that temperature range because of the suppression of contaminant deposition by means of evaporation or incineration.

This paper describes the newly developed processes of low temperature wafer bonding using plasma activation and deep dry silicon etching technologies. Both processes are a new type of “MEMS” (Micro Electro Mechanical System) process technology suitable for automotive pressure sensors. The conventional pressure sensor was a unified unit consisting of a silicon sensor chip and a glass stage. The diced unified unit was cut from a bonded disk of a processed silicon wafer and a glass stage substrate, and the silicon sensor chip incorporated four piezo-resistors, a diaphragm and bipolar-circuit. However, the pressure sensor had difficulty in accurately measuring pressure in the high temperature range because of the thermal strain caused by the thermal expansion coefficient difference between the silicon sensor chip and the glass stage.