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As the United States Air Force (USAF) in addition to the rest of DoD and American society become increasingly dependent on smaller, faster, cheaper, higher-performing integrated circuits (IC), digital, technologies that have more functionality, we must not overlook the fact that better-performance does not come without its price. In this paper, we discuss the integrated circuit; solid-state and IC history; IC functionality; IC manufacturing process; and silicon and silicon dioxide heat transfer rates. We discuss customized ICs such as Field Programmable Gate Array (FPGA), Application Specific Integrated Circuit (ASIC), and Micro-Electro-Mechanical Systems (MEMS). We discuss the Fourier heat equation. We discuss how increasing the numbers of transistors and their support components increases the density relating to the interior of such semiconductor materials.

In this paper, we discuss the metal-oxide-silicon field-effect transistor (MOSFET) also known as the insulated-gate field-effect transistor (IGFET); its applications; the heat it generates because of its material properties. The paper discusses MOSFET’s dimensions, densities, and why the heat it generates is continually increasing. Finally, there is discussion about various present-day thermal management solutions used for resolving MOSFET thermal issues and a recommendation for future approaches.

The bipolar junction transistor (BJT) generates heat that can lead to thermal runaway. BJT temperature increases can affect how well this device performs. Moreover, integrated circuits (IC) consisting of large numbers of BJTs can have an adverse effect on how the device performs in aggregate. This paper discusses the BJT functionality and causes of heat generation and proposes potential solutions to this thermal problem.