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A small. low-cost piezoresistive acceleration sensor suitable for automotive applications such as advanced breaking control and suspension control systems has been developed. A piezoresistive semiconductor sensor has such advantages as high output linearity, long-term output repeatability and DC response a piezoelectric sensor doesn't feature. One drawback. however, is that piezoresistive characteristics are quite temperature sensitive: Such that temperature dependence of DC offset and span have to be compensated with a certain electrical circuit. With 1 mV/Vs/G, the low sensitivity of the acceleration sensor [Vs:bridge voltage. G:gravitational acceleration], the temperature shift of DC offset represented in terms of the sensitivity, becomes relatively high.

An SOI type pressure sensor has been developed which can measure pressure at high temperature environments above 150°C. SOI stands for Silicon On Insulator. A single-crystalline silicon layer is located on an insulating layer formed on a silicon substrate. The piezoresistors of the SOI type pressure sensor are made from the single-crystalline silicon layer which is isolated from the silicon substrate by the insulating layer. There is no leakage current from the piezoresistors. The SOI structure is made by the laser-recrystallization-method. The properties of the SOI type pressure senor are as good as conventional semiconductor pressure sensors.