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This paper focuses on present information and technical details about the connectivity and new technologies in automotive infotainment systems, based on an independent research of the authors using public references. The evolution of the consumer electronics and the electronic products in all areas allowed new features in the automotive market. The changes in the microelectronics industries accelerate the release of new technologies. Transistor by transistor, the electronics industry is literally changing the world. Consider this: in 2015, there will be more than seven billion mobile devices in the world consuming and generating massive amounts of data. In addition to that, there are more than one billion transistors for each person in world due to the popularization of computers, smartphones and tablets. In this sense, vehicle’s development is following the same tendency, the leverage of new technology even in the entry level vehicles is a must.

This paper describes how new transistors layouts can mitigate failures Induced by atmospheric radiation, focusing on the total ionizing dose (TID) effects. By conducting an experimental comparative study of the TID effects between the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) manufactured with new layouts proposals and the standard layout (Conventional), for devices exposed to 10 keV X-ray irradiation using a Shimadzu XRD-7000 equipment, this paper suggests a new approach of layouts to have a better performance in radiation environment with low cost impact, lower power consumption, more speed and they could keep robustness and reliability.