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A 1200-V, 600-A silicon carbide (SiC) JFET half-bridge module has been developed for drop-in replacement of a 600-V, 600-A IGBT intelligent power module (IPM). Advances in the development of SiC field effect transistors have resulted in reliable high yield devices that can be paralleled and packaged to produce high-voltage and high-current power modules not only competitive with existing IGBT technology but the modules have expanded capabilities. A SiC vertical junction field effect transistor VJFET has been produced with the properties of lower conduction loss, zero tail current, higher thermal conductivity, and higher power density when compared to a similarly rated silicon IGBT or any practical SiC MOSFETs previously reported. Three prototype SiC JFET half-bridge modules with gate drivers have been successfully integrated into a three-phase 30-kW (continuous), 100-kW (intermittent) AC synchronous motor drive designed to control a traction motor in an electric vehicle.

A dynamic modeling framework was established to predict status (position, displacement, velocity, acceleration, and shape) of a towed vehicle system with different driver inputs. This framework consists of three components: (1) a state space model to decide position and velocity for the vehicle system based on Newton’s second law; (2) an angular acceleration transferring model, which leads to a hypothesis that the each towed unit follows the same path as the towing vehicle; and (3) a polygon model to draw instantaneous polygons to envelop the entire system at any time point. Input parameters of this model include initial conditions of the system, real-time locations of a reference point (e.g. front center of the towing vehicle) that can be determined from a beacon and radar system, and instantaneous accelerations of this system, which come from driver maneuvers (accelerating, braking, steering, etc.) can be read from a data acquisition system installed on the towing vehicle.

The SiC Junction Field Effect Transistor (JFET) technology has continued to mature, allowing for a wider range of product offerings that are expected to play an important role in the future aerospace and hybrid vehicle system designs. This paper will give an overview of vertical trench SiC JFET technology detailing the high-temperature dc characteristics of the discrete devices also show power module switching behavior up to 100A. Additional characterization of the all-SiC power modules used as solid-state circuit breakers will be given.