HWBE and FE Growths Techniques of the Semiconductors Compounds with Applications in Thermal Infrared Devices 2007-01-2596
Infrared detectors are radiant energy transducers, which convert this energy in electric energy, and usually have to be cooled and kept at 77 K to work property. A tool that comes if shown sufficiently useful of research is the thermographic that is the technology of acquisition of images generated from the capitation of the thermal infrared radiation. To detect these emissions of is extreme importance for aeronautical and warlike industries. Analyzes generates by Scanning Electronic Microscopy (SEM) and X-Ray Diffraction were used in order to compare epitaxial layers of the semiconductor with narrow gap lead telluride (PbTe), grown of high quality by Hot Wall Beam Epitaxy technique (HWBE or only HWE) and Flash Evaporation (FE), directly over single crystal silicon (Si) wafers, p-type. These heterojunctions are used as thermal infrared detectors, which work at room temperature .
Citation: Renosto, S., Ribeiro, L., Guimarães, S., and de Lima, J., "HWBE and FE Growths Techniques of the Semiconductors Compounds with Applications in Thermal Infrared Devices," SAE Technical Paper 2007-01-2596, 2007, https://doi.org/10.4271/2007-01-2596. Download Citation
Sergio Tuan Renosto, Lívia de Souza Ribeiro, Sônia Guimarães, Joaquim Tavares de Lima
Universidade de São Paulo - USP, Escola de Engenharia de Lorena - EEL., Comando geral de Tecnologia Aeronáutica - CTA, Instituto de Aeronáutica e Espaço - IAE, Divisão de Materiais - AMR.