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With the increasing attention towards electric vehicles (EV), power electronics technology has become more prominent on vehicular systems. EV requires compact energy conversion and control technology to improve system efficiency and optimize the sizing of power components. Therefore, it is important to reduce thermal losses, while supplying an adequate amount of power to different EV devices. Silicon carbide (SiC)-based power semiconductors provide performance improvements such as lower power losses, higher junction temperature and higher switching frequency compared to the conventional silicon (Si)-based switching devices. High-frequency switching is preferred for power converters to minimize the necessity of passive filters; however, high-frequency switching causes additional thermal stress on semiconductor switches due to the increase in switching losses. The degradation of switching devices in power converters are primarily related to the junction temperature.