Development of TLP-AI Technology to realize high temperature operation of power module
SiC power devices are promising components for the power module assembled in the automobile power control unit due to their low-power loss operation. Also they have high thermostable characteristics which are expected to tolerate high temperature operation, widening the range that the conventional Si device has limited. While, the packaging technology is also needed to improve the thermo-stability to derive the full potential of SiC power device, especially the device bonding which is directly related to the device thermally and physically. TLP bonding is one of the promising technologies for the high temperature operation because its bonding layer has high melting point. But there is a problem that characteristic of TLP bonding layer causes the damage to the power device.