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Semiconductor devices in electric vehicle (EV) motor drive systems are considered the most fragile components with a high occurrence rate for open circuit fault (OCF). Various signal-based and model-based methods with explicit mathematical models have been previously published for OCF diagnosis. However, this proposed work presents a model-free machine learning (ML) approach for a single-switch OCF detection and localization (DaL) for a two-level, three-phase inverter. Compared to already available ML models with complex feature extraction methods in the literature, a new and simple way to extract OCF feature data with sufficient classification accuracy is proposed. In this regard, the inherent property of active thermal management (ATM) based model predictive control (MPC) to quantify the conduction losses for each semiconductor device in a power converter is integrated with an ML network.

The application of power electronic converters (PEC) in electric vehicles (EVs) has increased immensely as they provide enhanced controllability and flexibility to these vehicles. Accordingly, the interest in developing innovative and sustainable technologies to ensure safe and reliable operation of PECs has also risen. One of the most difficult challenges experienced during the development of reliable PECs is the design of proper thermal management systems for controlling the junction temperature and reducing the thermal cycling of power semiconductors. The addition of Active Thermal Control (ATC) can mitigate these concerns. Moreover, the performance of the thermal management system can be enhanced further by the integration of active cooling methods. An active cooling system consumes external energy for circulating cooling air or liquid within the PECs.

With the increasing attention towards electric vehicles (EV), power electronics technology has become more prominent on vehicular systems. EV requires compact energy conversion and control technology to improve system efficiency and optimize the sizing of power components. Therefore, it is important to reduce thermal losses, while supplying an adequate amount of power to different EV devices. Silicon carbide (SiC)-based power semiconductors provide performance improvements such as lower power losses, higher junction temperature and higher switching frequency compared to the conventional silicon (Si)-based switching devices. High-frequency switching is preferred for power converters to minimize the necessity of passive filters; however, high-frequency switching causes additional thermal stress on semiconductor switches due to the increase in switching losses. The degradation of switching devices in power converters are primarily related to the junction temperature.