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Electric vehicles (EVs) are becoming increasingly recognized as an effective solution in the battle against climate change and reducing greenhouse gas emissions. Lithium-ion batteries have become the standard for energy storage in the automobile industry, widely used in EVs due to their superior characteristics compared to other batteries. The growing popularity of the Vehicle-to-grid (V2G) concept can be attributed to its surplus energy storage capacity, positive environmental impact, and the reliability and stability of the power grid. However, the increased utilization of the battery through these integrations can result in faster degradation and the need for replacement. As batteries are one of the most expensive components of EVs, the decision to deploy an EV in V2G operations may be uncertain due to the concerns of battery degradation from the owner’s perspective.

Semiconductor devices in electric vehicle (EV) motor drive systems are considered the most fragile components with a high occurrence rate for open circuit fault (OCF). Various signal-based and model-based methods with explicit mathematical models have been previously published for OCF diagnosis. However, this proposed work presents a model-free machine learning (ML) approach for a single-switch OCF detection and localization (DaL) for a two-level, three-phase inverter. Compared to already available ML models with complex feature extraction methods in the literature, a new and simple way to extract OCF feature data with sufficient classification accuracy is proposed. In this regard, the inherent property of active thermal management (ATM) based model predictive control (MPC) to quantify the conduction losses for each semiconductor device in a power converter is integrated with an ML network.

This paper proposes a novel 1-ϕ, Cuk based on-board electric vehicle (EV) charger with least power components. The proposed EV charger has a special feature to achieve power factor correction (PFC) at AC grid without requirement of the grid voltage and current sensors which cuts the cost and increases the power density of the EV charger along with robustness to noise. The automatic PFC at AC grid is accomplished by operating the output DC inductor in discontinuous conduction mode (DCM). The proposed EV charger necessitates a minimal number of power components for positive and negative half cycles of AC grid which improves the overall efficiency of the system. This is possible due to the combination of inverting and non-inverting Cuk converters are used for each half cycle of the AC grid. Further, the presence of output inductor in the EV charger reduces the ripples in the output current which is not common with all the existing chargers in the literature.

Electrified transportation has received significant interest recently because of sustainable and clean energy goals. However, the degradation of electrical components such as energy storage systems raises system reliability and economic concerns. In this paper, a prognostic-based control strategy is proposed for hybrid electric vehicles (HEVs) to abate the degradation of energy systems. Degradation forecasting models of electrical components are developed to predict their degradation paths. The predicted results are then used to control HEVs in order to reduce the degradation of components.

With the increasing attention towards electric vehicles (EV), power electronics technology has become more prominent on vehicular systems. EV requires compact energy conversion and control technology to improve system efficiency and optimize the sizing of power components. Therefore, it is important to reduce thermal losses, while supplying an adequate amount of power to different EV devices. Silicon carbide (SiC)-based power semiconductors provide performance improvements such as lower power losses, higher junction temperature and higher switching frequency compared to the conventional silicon (Si)-based switching devices. High-frequency switching is preferred for power converters to minimize the necessity of passive filters; however, high-frequency switching causes additional thermal stress on semiconductor switches due to the increase in switching losses. The degradation of switching devices in power converters are primarily related to the junction temperature.